Benha University

هناء محمد ابو المجد احمد مصطفى

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كلية الهندسة بشبرا هندسة الرياضيات والفيزياء

Precise determination of optical band gap in Cr-doped semiconductor nanowires

Optical and Quantum Electronics • 2021
العودة
معلومات البحث
المؤلفون Noori S Anad, Zakaria M Abd El-Fattah, M Attallah, Hanaa M Ahmed, MM El-Okr, Hany H El-Bahnasawy
الكلمات المفتاحية Not Available
المجلة العلمية Optical and Quantum Electronics
الناشر Springer
المجلد 54
العدد 2
الصفحات 1-14
publication.type International
رابط البحث Open Link
المواد المرفقة Not Available
الملخص
Pristine and chromium-doped ZnO nanowires were prepared following the traditional co-precipitation method. X-ray diffraction data identified a pure wurtzite hexagonal crystal structure characteristic for ZnO, irrespective of the doping level. The particle size, as deduced form Williamson–Hall plots, was found to be 45–55 nm for all samples. Scanning electron microscopy revealed a clear nanowires morphology for the pure and doped samples, while elemental analysis ensured the successful Cr-doping. Distinct spectroscopic signatures of Cr-doping were revealed from a detailed deconvolution process applied to optical spectra of doped samples, where Cr3+ optical transitions were unambiguously identified at ~ 420 and ~ 665 nm. Particularly relevant, is the spectral decomposition here performed for the superimposed absorption edge (~ 385 nm) and Cr3+  optical resonance at ~ 420 nm, allowing to claim practically doping-independent optical band gap behavior in the present doping regime. This is further supported by identifying the characteristic ZnO near edge photoluminescence peak (~ 392 nm) which maintains fixed wavelength after Cr-doping. These findings contrast earlier studies on Cr-doped semiconductor nanoparticles and glass systems where the optical band gap has been largely underestimated. We attribute the inconsistence band gap values reported in literature for Cr-doped semiconductors to the proximity of Cr optical transitions to the semiconductor absorption edge.
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