Benha University

اسلام منصور عبد الفتاح

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كلية الهندسة بشبرا الهندسة الكهربائية

DC-10 GHz broadband linear power amplifier for 5G applications using 180 nm CMOS technology

AEU-International Journal of Electronics and Communications • 2023
العودة
معلومات البحث
المؤلفون Marwa Mansour, Islam Mansour
الكلمات المفتاحية Not Available
المجلة العلمية AEU-International Journal of Electronics and Communications
الناشر Urban & Fischer
المجلد 160
العدد Not Available
الصفحات 154518
publication.type International
رابط البحث Not Available
المواد المرفقة Not Available
الملخص
Urban & Fischer
Description
This article suggests a broadband linear power amplifier (PA) for DC-10 GHz for Fifth-generation (5G) and multi-standard applications using 180 nm CMOS technology. The suggested radio frequency power amplifier is appropriate for wideband LTE, IoT, WSN, multi-standard, and 5G radio frequency transmitters. T-coil peaking and bridged-shunt-series peaking amplifiers are used for bandwidth extension and gain flatness. Also, the interstage matching inductors between common source and common gate transistors are applied to improve radio frequency achievement. The suggested PA consists of four stages as follows; input stage, two stages using the T-coil peaking technique, and the last stage utilizing bridged-shunt-series peaking topology. The input stage is a complementary current reuse (CCR) common gate with active shunt feedback (SFB) architecture.
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