Ahmed ٍSaeed Hassanien
Prof. Emeritus
Optical properties of quaternary a-Ge15-x Sbx Se50 Te35 thermally evaporated thin-films: refractive index dispersion and single oscillator parameters
Optik • 2019
Publication Information
Authors
Ahmed Saeed Hassaniena, Ishu Sharma
Keywords
Amorphous semiconductors; Thermally evaporated thin films; Optical properties; Single effective oscillator model; Dielectric constants
Nonlinear optical parameters
Journal
Optik
Publisher
Elsevier
Volume
200C
Issue
January 2020, Article 163415
Pages
1-15
publication.type
International
Paper Link
Open Link
Supplementary Materials
Not Available
Abstract
The present research is allocated to study the essential optical properties and parameters, of thinfilm samples of quaternary Ge15-xSbxSe50Te35 glassy matrices (0 x 15 at. wt. % ≤ ≤ ) such as: the
single effective oscillatordispersion parameters, dielectric characteristics and some non-linear
optical constants. The current study is a continuation of a previous work, which has been published before. Bulk glasses are synthesized using conventional melt quench, while thin films are
deposited via thermal evaporation method. X-ray diffraction patterns expose the amorphous
nature of all prepared bulk and film samples. Energy dispersive of X-ray analysis also reveals a
good match between the calculated and the measured compositional element percentages of all
the samples. The optical and dielectric properties of film samples are studied depending upon
transmittance, T and reflectance, R spectrophotometric measurements. Optical refractive index
(n) and extinction coefficient (k) are used to estimate many crucial dielectric and opto-electrical
parameters. An increase in the values of the normal refractive index, static refractive index, single
oscillator energy, lattice-dielectric constant, high-frequency dielectric constant, charge carrier
concentration, volume energy loss functions, third order susceptibility is found. On the contrary,
dispersion energy, oscillator strength, surface energy loss function, plasma frequency and electronegativity values are found to decrease as the Sb-percentage in the Ge-Sb-Se-the network
increases. The interrelationships among investigated parameters have been extensively studied
and discussed. The present film samples can be employed in the nonlinear optical applications
and devices.
single effective oscillatordispersion parameters, dielectric characteristics and some non-linear
optical constants. The current study is a continuation of a previous work, which has been published before. Bulk glasses are synthesized using conventional melt quench, while thin films are
deposited via thermal evaporation method. X-ray diffraction patterns expose the amorphous
nature of all prepared bulk and film samples. Energy dispersive of X-ray analysis also reveals a
good match between the calculated and the measured compositional element percentages of all
the samples. The optical and dielectric properties of film samples are studied depending upon
transmittance, T and reflectance, R spectrophotometric measurements. Optical refractive index
(n) and extinction coefficient (k) are used to estimate many crucial dielectric and opto-electrical
parameters. An increase in the values of the normal refractive index, static refractive index, single
oscillator energy, lattice-dielectric constant, high-frequency dielectric constant, charge carrier
concentration, volume energy loss functions, third order susceptibility is found. On the contrary,
dispersion energy, oscillator strength, surface energy loss function, plasma frequency and electronegativity values are found to decrease as the Sb-percentage in the Ge-Sb-Se-the network
increases. The interrelationships among investigated parameters have been extensively studied
and discussed. The present film samples can be employed in the nonlinear optical applications
and devices.
